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I use ql_memory_bank shift_register configuration protocol with SRAM cells. SRAM cells have BL, WL and WLR pins as described in .
We need read enable signal for reading SRAM but I think WLR is overkill for this function. Wouldn't it be better if we use 1-bit wide read_enable signal (connected to all SRAMs) and WL together. WL is for decoding and read_enable signal is for deciding write or read operation.
Also BL should be defined as inout for bidirectional read/write operations.
Thank you,
Best regards.
The text was updated successfully, but these errors were encountered:
I use ql_memory_bank shift_register configuration protocol with SRAM cells. SRAM cells have BL, WL and WLR pins as described in .
We need read enable signal for reading SRAM but I think WLR is overkill for this function. Wouldn't it be better if we use 1-bit wide read_enable signal (connected to all SRAMs) and WL together. WL is for decoding and read_enable signal is for deciding write or read operation.
Also BL should be defined as inout for bidirectional read/write operations.
Thank you,
Best regards.
The text was updated successfully, but these errors were encountered: